IS25LP032D-RBLE:P datasheet(66/118 Pages) ISSI

部件名	IS25LP032D-RBLE:P

功能描述	SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE

PDF	118 Pages

Scroll/Zoom	100%

制造商	ISSI [Integrated Silicon Solution, Inc]

网页	http://www.issi.com

标志

66 / 118 page

IS25LP032D

IS25WP032D

Integrated Silicon Solution, Inc.- www.issi.com

Rev. A12

08/04/2020

8.23 RELEASE DEEP POWER DOWN (RDPD, ABh)

The Release Deep Power-down/Read Device ID instruction is a multi-purpose command. To release the device

from the Power-down m

ode, the instruction is issued by driving the CE# pin low, shifting the instruction code “ABh”

and driving CE# high.

Releasing the device from Power-down mode will take the time duration of tRES1 before normal operation is restored

and other instructions are accepted. The CE# pin must remain high during the tRES1 time duration. If the Release

Deep Power-down/RDID instruction is issued while an Erase, Program or Write cycle is in progress (WIP=1) the

instruction is ignored and will not have any effects on the current cycle.

Figure 8.38 Release Deep Power Down Mode Sequence In SPI Mode

tRES1

Instruction = ABh

CE #

SCK

Mode 3

Mode 0

High Impedance

Figure 8.39 Release Deep Power Down Mode Sequence In QPI Mode

tRES1

ABh

CE#

SCK

IO[3:0]

Mode 3

Mode 0

IS25LP032D-RBLE:P 数据表(PDF) 66 Page - Integrated Silicon Solution, Inc