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BLUENRG-LP 数据表(PDF) 48 Page - STMicroelectronics

部件名 BLUENRG-LP
功能描述  Programmable Bluetooth® Low Energy wireless SoC
PDF  72 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BLUENRG-LP 数据表(HTML) 48 Page - STMicroelectronics

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5.3.14
Flash memory characteristics
The characteristics below are guaranteed by design.
Table 31. Flash memory characteristics
Symbol
Parameter
Test conditions
Typ.
Max.
Unit
tprog
32-bit programming time
20
40
µs
tprog_burst
4x32-bit burst programming time
20
40
tERASE
Page (2 kbyte) erase time
20
40
ms
tME
Mass erase time
20
40
IDD
Average consumption from VDD
Write mode
3
mA
Erase mode
3
Mass erase
5
Table 32. Flash memory endurance and data retention
Symbol
Parameter
Test conditions
Min.
Unit
NEND
Endurance
TA = -40 to +105 ºC
10
kcycles
tRET
Data retention
TA = 105 ºC
10
Years
5.3.15
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each
sample according to each pin combination. The sample size depends on the number of supply pins in the device
(3 parts x (n + 1) supply pins). This test conforms to the ANSI/JEDEC standard.
Table 33. ESD absolute maximum ratings
Symbol
Parameter
Conditions
Class Max.(1) Unit
VESD(HBM)
Electrostatic discharge voltage (human body
model)
Conforming to ANSI/ESDA/JEDEC JS-001
2
2000
V
VESD(CBM)
Electrostatic discharge voltage (charge
device model)
Conforming to ANSI/ESDA/STM5.3.1
JS-002
C2a
500
1. Guaranteed by design.
5.3.16
I/O port characteristics
Unless otherwise specified, the parameters given in the tables below are derived from tests performed under the
conditions summarized in Section 5.3.2 General operating conditions. All I/Os are designed as CMOS-compliant.
The characteristics below are guaranteed by characterization.
Table 34. I/O static characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VIL
I/O input low level voltage
1.62 V < VDD < 3.6 V
0.3 x VDD
V
VIH
I/O input high level voltage
0.7 x VDD
Ilkg
Input leakage current
0 <= VIN <= Max(VDDx)(1)
+/-100
nA
Max(VDDx)(1) <= VIN <= Max(VDDx)(1) +1 V
650
Max(VDDx)(1) + 1 V < VIN <= 5.5 V
200
BlueNRG-LP
Operating conditions
DS13282 - Rev 2
page 48/72



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