UTM4052G-S08-R datasheet(5/14 Pages) VBSEMI

部件名	UTM4052G-S08-R

功能描述	N- and P-Channel 60-V (D-S) MOSFET

PDF	14 Pages

Scroll/Zoom	100%

制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

标志

5 / 14 page

N-CHANNEL TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

1.4

0.0

0.2

0.4

0.6

0.8

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.04

0.05

0.06

0.07

0.08

0.09

0.10

0.11

0.12

2468

ID = 4.3 A

VGS - Gate-to-Source Voltage (V)

Time (s)

1000

0.1

0.01

100

Safe Operating Area

100

0.1

100

0.001

TA = 25 °C

Single Pulse

0.1

DS(on)

Limited by R

VDS - Drain-to-Source Voltage (V)

* VGS

minimum VGS at which RDS(on) is specified

0.01

1 ms

10 ms

100 ms

100 µs

1 s

10 s

UTM4052G-S08-R

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