UTM4052G-S08-R datasheet(9/14 Pages) VBSEMI

部件名	UTM4052G-S08-R

功能描述	N- and P-Channel 60-V (D-S) MOSFET

PDF	14 Pages

Scroll/Zoom	100%

制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

标志

9 / 14 page

P-CHANNEL TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 25 °C

VSD - Source-to-Drain Voltage (V)

TJ = 150 °C

- 0.4

- 0.2

0.0

0.2

0.4

0.6

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

2468

ID = 3.1 A

VGS - Gate-to-Source Voltage (V)

Time (s)

600

10-1

10-3

100

10-2

Safe Operating Area, Junction-to-Case

100

0.1

100

0.01

0.1

TA = 25 °C

Single Pulse

P(t) = 10

ID(on)

Limited

BVDSS Limited

P(t) = 1

P(t) = 0.1

P(t) = 0.01

P(t) = 0.001

P(t) = 0.0001

IDM Limited

Limited

by RDS(on)*

VDS - Drain-to-Source Voltage (V)

* VGS

minimum VGS at which RDS(on) is specified

UTM4052G-S08-R

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