UTM4052G-S08-R datasheet(2/14 Pages) VBSEMI

2 / 14 page

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

N-Ch

VGS = 0 V, ID = - 250 µA

P-Ch

- 60

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

N-Ch

ID = - 250 µA

P-Ch

- 50

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = 250 µA

N-Ch

- 6

ID = - 250 µA

P-Ch

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

VDS = VGS, ID = - 250 µA

P-Ch

- 1

- 3

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch

100

P-Ch

- 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

N-Ch

µA

VDS = - 60 V, VGS = 0 V

P-Ch

- 1

VDS = 60 V, VGS = 0 V, TJ = 55 °C

N-Ch

VDS = - 60 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 10

On-State Drain Currentb

ID(on)

VDS ≥ 5 V, VGS = 10 V

N-Ch

VDS ≤ - 5 V, VGS = - 10 V

P-Ch

- 25

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 4.3 A

N-Ch

0.0

VGS = - 10 V, ID = - 3.1 A

P-Ch

055 0.060

VGS = 4.5 V, ID = 3.9 A

N-Ch

0.0

VGS = - 4.5 V, ID = - 0.2 A

P-Ch

060

070

Forward Transconductanceb

gfs

VDS = 15 V, ID = 4.3 A

N-Ch

VDS = - 15 V, ID = - 3.1 A

P-Ch

8.5

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 15 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 15 V, VGS = 0 V, f = 1 MHz

N-Ch

665

P-Ch

650

Output Capacitance

Coss

N-Ch

P-Ch

Reverse Transfer Capacitance

Crss

N-Ch

P-Ch

Total Gate Charge

VDS = 30 V, VGS = 10 V, ID = 4.3 A

N-Ch

VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A

P-Ch

14.5

N-Channel

VDS = 30 V, VGS = 4.5 V, ID = 4.3 A

P-Channel

VDS = - 30 V, VGS = - 4.5 V, ID = - 3.1 A

N-Ch

P-Ch

Gate-Source Charge

Qgs

N-Ch

2.3

P-Ch

2.2

Gate-Drain Charge

Qgd

N-Ch

2.6

P-Ch

3.7

Gate Resistance

f = 1 MHz

N-Ch

P-Ch

UTM4052G-S08-R

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