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UTM4052G-S08-R 数据表(PDF) 8 Page - VBsemi Electronics Co.,Ltd

部件名 UTM4052G-S08-R
功能描述  N- and P-Channel 60-V (D-S) MOSFET
PDF  14 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

UTM4052G-S08-R 数据表(HTML) 8 Page - VBsemi Electronics Co.,Ltd

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P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
012
34
56
78
VGS = 10 thru 5 V
VDS - Drain-to-Source Voltage (V)
3 V
4 V
0.03
0.04
0.
05
0.
06
0.
07
0.
08
0.
09
0.
10
0.
11
0
5
10
15
20
25
ID - Drain Current (A)
VGS = 4.5 V
VGS = 10 V
0
2
4
6
8
10
0
3
6
9
12
15
VDS = 30 V
ID = 3.1 A
Qg - Total Gate Charge (nC)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
TC = 125 °C
- 55 °C
25 °C
VGS - Gate-to-Source Voltage (V)
Crss
0
200
400
600
800
1000
0
102030
405060
VDS - Drain-to-Source Voltage (V)
Coss
Ciss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50
- 25
0
25
50
75
100
125
150
175
VGS = 10 V
ID = 3.1 A
TJ - Junction Temperature (°C)
1.5
2.5
3.0
1.0
2.0
3.5
4.0
UTM4052G-S08-R
8
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw



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