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UTM4052G-S08-R 数据表(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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UTM4052G-S08-R 数据表(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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1 / 14 page ![]() N- and P-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • CCFL Inverter PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) N-Channel 60 0.0 28 at V GS = 10 V 5.3 6 nC 0.0 31 at V GS = 4.5 V 4.7 P-Channel - 60 0. 050 at V GS = - 10 V - 4.9 8 nC 0. 060 at V GS = - 4.5 V - 4.5 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 2 3 4 1 N-Channel MOSFET D1 G1 S1 S2 G2 D2 P-Channel MOSFET Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 60 - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 5.3 - 4.9 A TC = 70 °C 4.3 - 4.2 TA = 25 °C 4.3b, c - 4.0b, c TA = 70 °C 3.4b, c - 3.4b, c Pulsed Drain Current (10 µs Pulse Width) IDM 20 - 25 Source Drain Current Diode Current TC = 25 °C IS 2.6 - 2.8 TA = 25 °C 1.7b, c - 1.7b, c Pulsed Source-Drain Current ISM 20 - 25 Single Pulse Avalanche Current L = 0.1 mH IAS 11 15 Single Pulse Avalanche Energy EAS 6.1 11 mJ Maximum Power Dissipation TC = 25 °C PD 3.1 3.4 W TC = 70 °C 22.2 TA = 25 °C 2b, c 2b, c TA = 70 °C 1.3b, c 1.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 55 62.5 53 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 33 40 30 37 UTM4052G-S08-R 1 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw |
类似零件编号 - UTM4052G-S08-R |
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类似说明 - UTM4052G-S08-R |
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