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ADPA7007AEHZ-R7 数据表(PDF) 16 Page - Analog Devices

部件名 ADPA7007AEHZ-R7
功能描述  20 GHz to 44 GHz, GaAs, pHEMT, 31.5 dBm (>1 W), MMIC Power Amplifier
PDF  23 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADPA7007AEHZ-R7 数据表(HTML) 16 Page - Analog Devices

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ADPA7007
Data Sheet
Rev. 0 | Page 16 of 23
THEORY OF OPERATION
The simplified architecture of the ADPA7007 power amplifier
is shown in Figure 54. The ADPA7007 is a cascaded, three-
stage amplifier with a combined gain of 21.5 dB and a PSAT
value of 31.5 dBm.
The drain current is controlled by the voltage on the VGG1 and
VGG2 pins. These pins must be connected together and driven
by a negative voltage in the −1.5 V to 0 V range (typical gate
bias voltage for a quiescent drain current bias of 1400 mA is
−0.685 V). Simplified bias pin connections to the dedicated
gain stages are shown in Figure 54.
VDD5
VDD3
VDD1
VDD6
VGG1 VGG2
VDD4
VDD2
RFOUT
RFIN
Figure 54. Simplified Architecture of ADPA7007
A portion of the RF output signal is directionally coupled to a
diode for detection of the RF output power. When the diode is
dc biased, the diode rectifies the RF power and makes the RF
power available for measurement as a dc voltage at VDET. To
allow temperature compensation of VDET, an identical and
symmetrically located circuit (minus the coupled RF power) is
available via VREF. The difference of VREF − VDET provides a
temperature compensated signal that is proportional to the RF
output.
To obtain optimal performance from the ADPA7007 and avoid
damaging the device, follow the recommended biasing
sequences described in the Applications Information section.



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