数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

ADPA1106ACGZN-R7 数据表(PDF) 17 Page - Analog Devices

部件名 ADPA1106ACGZN-R7
功能描述  46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier
PDF  19 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADPA1106ACGZN-R7 数据表(HTML) 17 Page - Analog Devices

Back Button ADPA1106ACGZN-R7 Datasheet HTML 11Page - Analog Devices ADPA1106ACGZN-R7 Datasheet HTML 12Page - Analog Devices ADPA1106ACGZN-R7 Datasheet HTML 13Page - Analog Devices ADPA1106ACGZN-R7 Datasheet HTML 14Page - Analog Devices ADPA1106ACGZN-R7 Datasheet HTML 15Page - Analog Devices ADPA1106ACGZN-R7 Datasheet HTML 16Page - Analog Devices ADPA1106ACGZN-R7 Datasheet HTML 17Page - Analog Devices ADPA1106ACGZN-R7 Datasheet HTML 18Page - Analog Devices ADPA1106ACGZN-R7 Datasheet HTML 19Page - Analog Devices  
Zoom Inzoom in Zoom Outzoom out
 17 / 19 page
background image
Data Sheet
ADPA1106
APPLICATIONS INFORMATION
analog.com
Rev. 0 | 17 of 19
Figure 53. Recommended Detector Subtraction Circuit
THERMAL MANAGEMENT
Proper thermal management is critical to achieve the specified
performance and rated operating life. Pulsed biasing is required
to limit the average power dissipated and maintain a safe channel
temperature. The channel (or die) temperature correlates closely
with the mean time to failure.
Consider a continuous bias case (see Figure 54). When bias is ap-
plied, the channel temperature (TCHAN) of the device rises through
a turn on transient interval and eventually settles to a steady state
value. Calculate the θJC thermal resistance of the device as the rise
in TCHAN above the starting TBASE divided by the total device PDISS
with the following equation:
θJC = tRISE/PDISS
where:
tRISE is the peak rise in the TCHAN of the device above the TBASE
(°C).
PDISS is the power dissipation (W) of the device.
Figure 54. Continuous Bias
Next, consider a pulsed bias case at a fixed pulse width and duty
cycle (see Figure 55). When bias is applied, the TCHAN of the
device can be described as a series of exponentially rising and
decaying pulses. The peak channel temperature reached during
consecutive pulses increases during the turn on transient interval,
and eventually settles to a steady state condition where peak
channel temperatures from pulse to pulse stabilize.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com