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ADR4520ARZ-R7 数据表(PDF) 35 Page - Analog Devices |
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ADR4520ARZ-R7 数据表(HTML) 35 Page - Analog Devices |
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35 / 40 page ![]() Data Sheet ADR4520/ADR4525/ADR4530/ADR4533/ADR4540/ADR4550 Rev. D | Page 35 of 40 Boosted Output Current Reference Figure 109 shows a configuration for obtaining higher current drive capability from the ADR4520/ADR4525/ADR4530/ ADR4533/ADR4540/ADR4550 references without sacrificing accuracy. The op amp regulates the current flow through the metal-oxide semiconductor field effect transistor (MOSFET) until VOUT equals the output voltage of the reference; current is then drawn directly from VIN instead of from the reference itself, allowing increased current drive capability. CL CL 0.1µF 2N7002 AD8663 VIN U6 VOUT +16V 0.1µF 1µF R1 100Ω RL 200Ω ADR4520/ADR4525/ ADR4530/ADR4533/ ADR4540/ADR4550 VIN VOUT GND 2 6 4 PART NUMBER MINIMUM CL ADR4520, ADR4525 1.0µF ADR4530, ADR4533, ADR4540, ADR4550 0.1µF Figure 109. Boosted Output Current Reference Because the current sourcing capability of this circuit depends only on the current rating of the MOSFET, the output drive capability can be adjusted to the application simply by choosing an appropriate MOSFET. In all cases, tie the VOUT pin directly to the load device to maintain maximum output voltage accuracy. LONG-TERM DRIFT The stability of a precision signal path over its lifetime or between calibration procedures is dependent on the long-term stability of the analog components in the path, such as op amps, references, and data converters. To help system designers predict the long- term drift of circuits that use the ADR4520/ADR4525/ADR4530/ ADR4533/ADR4540/ADR4550, Analog Devices measured the output voltage of multiple units for more than 4500 hours (more than 6 months) using a high precision measurement system, including an ultrastable oil bath. To replicate real-world system performance, the devices under test (DUTs) were soldered onto an FR4 PCB using a standard reflow profile (as defined in the JEDEC J-STD-020D standard), rather than testing them in sockets. This manner of testing is important because expansion and contraction of the PCB can apply stress to the integrated circuit (IC) package and contribute to shifts in the offset voltage. Figure 110 shows the long-term drift of the ADR4520/ ADR4525/ADR4530/ADR4533/ADR4540/ADR4550. Sample 1, Sample 2, and Sample 3 plot traces show sample units. The mean drift after 4500 hours is 51 ppm. Note that the early life drift (0 hours to 250 hours) accounts for 40% of the total drift observed over 4500 hours, as shown in Figure 111. The first 1000 hours account for 50% of the total drift, and the remaining 3500 hours account for the remaining 50% of the drift. Thus, the early life drift is the dominant contributor, whereas the drift after 1000 hours is significantly lower. 0 500 1000 1500 2000 2500 3000 3500 4000 4500 TIME (Hours) –150 –100 –50 0 50 100 150 MEAN MEAN PLUS ONE STANDARD DEVIATION MEAN MINUS ONE STANDARD DEVI ATION SAMPLE 1 SAMPLE 2 SAMPLE 3 108 UNITS TA = 25°C Figure 110. Measured Long-Term Drift of the ADR4520/ADR4525/ADR4530/ ADR4533/ADR4540/ADR4550 over 4,500 Hours 0 50 100 150 200 250 TIME (Hours) –50 –40 –30 –20 –10 0 10 20 30 40 50 108 UNITS TA = 25°C MEAN MEAN PLUS ONE STANDARD DEVIATION MEAN MINUS ONE STANDARD DEVI ATION SAMPLE 1 SAMPLE 2 SAMPLE 3 Figure 111. Measured Early Life Drift of the ADR4520/ADR4525/ADR4530/ ADR4533/ADR4540/ADR4550 TIME (HOURS) –40 0 1000 2000 3000 4000 5000 –30 –20 –10 0 10 20 30 40 54 UNITS TA = 25°C MEAN MEAN PLUS ONE STANDARD DEVI ATION MEAN MINUS ONE STANDARD DEVI ATION SAMPLE 1 SAMPLE 2 SAMPLE 3 Figure 112. Measured Long-Term Drift of the ADR4525D/ADR4540D/ ADR4550D over 4,500 Hours |
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