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ADR4520ARZ-R7 数据表(PDF) 4 Page - Analog Devices

部件名 ADR4520ARZ-R7
功能描述  Ultralow Noise, High Accuracy Voltage References
PDF  40 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADR4520ARZ-R7 数据表(HTML) 4 Page - Analog Devices

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ADR4520/ADR4525/ADR4530/ADR4533/ADR4540/ADR4550
Data Sheet
Rev. D | Page 4 of 40
SPECIFICATIONS
ADR4520 ELECTRICAL CHARACTERISTICS
Unless otherwise noted, supply voltage (VIN) = 3 V to 15 V, IL = 0 mA, TA = 25°C.
Table 3.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
OUTPUT VOLTAGE
VOUT
2.048
V
INITIAL OUTPUT VOLTAGE ERROR
VOUT_ERR
B Grade
±0.02
%
410
μV
A Grade
±0.04
%
820
μV
SOLDER HEAT RESISTANCE SHIFT
±0.02
%
TEMPERATURE COEFFICIENT
TCVOUT
See Terminology section
B Grade
−40°C ≤ TA ≤ +125°C (box method)
2
ppm/°C
−40°C ≤ TA ≤ +125°C (bowtie method)
4
ppm/°C
A Grade
−40°C ≤ TA ≤ +125°C (box method)
4
ppm/°C
−40°C ≤ TA ≤ +125°C (bowtie method)
8
ppm/°C
LINE REGULATION
ΔVOUT/ΔVIN
−40°C ≤ TA ≤ +125°C
1
10
ppm/V
LOAD REGULATION
ΔVOUT/ΔIL
IL = 0 mA to +10 mA source, −40°C ≤ TA ≤
+125°C
30
80
ppm/mA
IL = 0 mA to −10 mA sink, −40°C ≤ TA ≤ +125°C
100
120
ppm/mA
QUIESCENT CURRENT
IQ
−40°C ≤ TA ≤ +125°C, no load
700
950
μA
DROPOUT VOLTAGE
VDO
−40°C ≤ TA ≤ +125°C, no load
1
V
−40°C ≤ TA ≤ +125°C, IL = 2 mA
1
V
RIPPLE REJECTION RATIO
RRR
Input frequency (fIN) = 1 kHz
90
dB
OUTPUT CURRENT CAPACITY
IL
Sinking
−8
mA
Sourcing
10
mA
OUTPUT VOLTAGE NOISE
eNp-p
0.1 Hz to 10.0 Hz
1.0
μV p-p
OUTPUT VOLTAGE NOISE DENSITY
eN
1 kHz
35.8
nV/√Hz
OUTPUT VOLTAGE HYSTERESIS
ΔVOUT_HYS
TA = temperature cycled from
+25°C to +125°C to−40°C to +25°C (full cycle)
−13
ppm
25°C to 125°C to 25°C (half cycle)
−97
ppm
25°C to 70°C to 0°C to 25°C (full cycle)
−8
ppm
25°C to 70°C to 25°C (half cycle)
−17
ppm
LONG-TERM DRIFT
ΔVOUT_LTD
TA = 25°C
250 hours (early life drift)
19
ppm
1000 hours
25
ppm
4500 hours
51
ppm
TURN-ON SETTLING TIME
tR
Output capacitor (COUT) = 1 µF, input capacitor
(CIN) = 0.1 µF, load resistance (RLOAD) = 1 kΩ
90
µs
LOAD CAPACITANCE
1
100
µF



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