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L6711 数据表(PDF) 19 Page - STMicroelectronics

部件名 L6711
功能描述  3 PHASE CONTROLLER WITH DYNAMIC VID AND SELECTABLE DACs
PDF  38 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6711 数据表(HTML) 19 Page - STMicroelectronics

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L6711
Offset automatically given by the DAC selection or by VID5 when VID_SEL=SGND differs from the offset
implemented through the OFFSET pin: the built-in feature is trimmed in production and assures ±0.5%
error (±0.6% for the Hammer DAC) over load and line variations while implementing the same offset
through the OFFSET pin causes additional errors to be considered in the total output voltage precision.
When the Integrated Thermal Sensor is enabled (see Figure 12 and following section), the pin programs,
in the same way as before, a negative offset. This is to compensate the positive native offset introduced
by the ITS. The effect of the programmed offset on the output voltage results (IOFFSET is now added to IFB
and no more subtracted as before):
Offset resistor is designed to compensate the ITS native offset as described in the following section.
The Offset function can be disabled by shorting the pin to SGND.
Figure 12. Voltage Positioning with Integrated Thermal Sensor
8.3
INTEGRATED THERMAL SENSOR
Current sense elements have non-negligible temperature variations: considering either inductor or LS
mosfet sense, the sensing elements modify proportionally to varying temperature. As a consequence, the
sensed current is subjected to a measurement error that causes the regulated voltage to vary accordingly.
To recover from this temperature related error, a temperature compensation circuit is integrated into the
controller: the internal temperature is sensed and the droop current is corrected (according to a scaling
external resistor RTC) in order to keep constant the regulated voltage.
The ITS circuit subtracts from the IFB current a current proportional to the sensed temperature as follow
(see Figure 12, Only the IDROOP and ITC contributes to IFB have been considered):
where
where A and B are positive constants depending on the value of the external resistor RTC (see Figure 13),
TJ is the device junction temperature and TMOS is the mosfet (or the used sensing element) temperature.
The resistor RTC can be designed in order to zero the temperature influence on the output voltage at a
fixed current as follow:
R
OFFSET
1.240 V
V
OS
------------------- R
FB
⋅
=
V
OUT
VID
R
FB IOFFSET
⋅
–
VID
R
FB
1.240
R
OFFSET
-------------------------
⎝⎠
⎛⎞
⋅
–
VID
V
OS
–
==
=
1.240V
1:1
VTC=A+B·(TJ-25)
RTC
ROFFSET
OFFSET
TC
1:1
IDROOP
VID
FB
COMP
I
FB
VSEN
64k
FBR
FBG
64k
RF
CF
RFB
To Vcore
(Remote Sense)
IOFFSET
V
OUT T,IOUT
()
VID
R
FB
R
SENSE TMOS
()
Rg
------------------------------------------- I
OUT
I
TC TJ
()
–
⋅
⋅
–
=
I
TC TJ
()
1
R
TC
-----------
AB
T
J
25
–
()
⋅
+
[]
⋅
=



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