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H5AN4G4NAFR-RDC 数据表(PDF) 17 Page - Hynix Semiconductor

部件名 H5AN4G4NAFR-RDC
功能描述  4Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)
PDF  45 Pages
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制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

H5AN4G4NAFR-RDC 数据表(HTML) 17 Page - Hynix Semiconductor

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Rev. 1.3 / Mar.2016
53
Table 2 -Basic IDD, IPP and IDDQ Measurement Conditions
Symbol
Description
IDD0
Operating One Bank Active-Precharge Current (AL=0)
CKE: High; External clock: On; tCK, nRC, nRAS, CL: see Table 1; BL: 81; AL: 0; CS_n: High
between ACT and PRE; Command, Address, Bank Group Address, Bank Address Inputs: partially
toggling according to Table 3; Data IO: VDDQ; DM_n: stable at 1; Bank Activity: Cycling with one
bank active at a time: 0,0,1,1,2,2,... (see Table 3); Output Buffer and RTT: Enabled in Mode
Registers2; ODT Signal: stable at 0; Pattern Details: see Table 3
IDD0A
Operating One Bank Active-Precharge Current (AL=CL-1)
AL = CL-1, Other conditions: see IDD0
IPP0
Operating One Bank Active-Precharge IPP Current
Same condition with IDD0
IDD1
Operating One Bank Active-Read-Precharge Current (AL=0)
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Table 1; BL: 81; AL: 0; CS_n: High
between ACT, RD and PRE; Command, Address, Bank Group Address, Bank Address Inputs,
Data IO: partially toggling according to Table 4; DM_n: stable at 1; Bank Activity: Cycling with one
bank active at a time: 0,0,1,1,2,2,... (see Table 4); Output Buffer and RTT: Enabled in Mode
Registers2; ODT Signal: stable at 0; Pattern Details: see Table 4
IDD1A
Operating One Bank Active-Read-Precharge Current (AL=CL-1)
AL = CL-1, Other conditions: see IDD1
IPP1
Operating One Bank Active-Read-Precharge IPP Current
Same condition with IDD1
IDD2N
Precharge Standby Current (AL=0)
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 81; AL: 0; CS_n: stable at 1; Command,
Address, Bank Group Address, Bank Address Inputs: partially toggling according to Table 5; Data
IO: VDDQ; DM_n: stable at 1; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in
Mode Registers2; ODT Signal: stable at 0; Pattern Details: see Table 5
IDD2NA
Precharge Standby Current (AL=CL-1)
AL = CL-1, Other conditions: see IDD2N
IPP2N
Precharge Standby IPP Current
Same condition with IDD2N
IDD2NT
Precharge Standby ODT Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 81; AL: 0; CS_n: stable at 1; Command,
Address, Bank Group Address, Bank Address Inputs: partially toggling according to Table 6; Data
IO: VSSQ; DM_n: stable at 1; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in
Mode Registers2; ODT Signal: toggling according to Table 6; Pattern Details: see Table 6
IDDQ2NT
(Optional)
Precharge Standby ODT IDDQ Current
Same definition like for IDD2NT, however measuring IDDQ current instead of IDD current
IDD2NL
Precharge Standby Current with CAL enabled
Same definition like for IDD2N, CAL enabled3
IDD2NG
Precharge Standby Current with Gear Down mode enabled
Same definition like for IDD2N, Gear Down mode enabled3
IDD2ND
Precharge Standby Current with DLL disabled
Same definition like for IDD2N, DLL disabled3



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