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STP50N65DM6 数据表(PDF) 5 Page - STMicroelectronics

部件名 STP50N65DM6
功能描述  N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP50N65DM6 数据表(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG261120190945SOA
10 2
10 1
10 0
10 -1
10 -2
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
single pulse
TC = 25 °C
TJ ≤ 150 °C
tp =100 µs
tp =10 µs
tp =1 ms
tp =1 µs
V(BR)DSS
Operation
in
this
area
is limited
by
RDS(on)
RDS(on) max.
IDM
tp =10 ms
Figure 2. Maximum transient thermal impedance
GADG211120191320ZTH
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
RthJ-C = 0.5°C/W
Zthj-c
(°C/W)
duty = 0.5
0.4
0.3
0.2
Single pulse
0.5
0.1
Figure 3. Typical output characteristics
GADG090720191225OCH
100
80
60
40
20
0
0
4
8
12
16
ID
(A)
VDS (V)
VGS = 9, 10 V
VGS = 8 V
VGS = 7 V
VGS = 6 V
VGS = 5 V
Figure 4. Typical transfer characteristics
GADG090720191225TCH
100
80
60
40
20
0
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 20 V
Figure 5. Typical gate charge characteristics
GADG090720191225QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
10
20
30
40
50
60
VDS
(V)
VGS
(V)
Qg (nC)
VDD = 520 V, ID = 33 A
Qg
Qgs
Qgd
Figure 6. Typical drain-source on-resistance
GADG090720191226RID
80
78
76
74
72
70
68
0
5
10
15
20
25
30
RDS(on)
(mΩ)
ID (A)
VGS = 10 V
STP50N65DM6
Electrical characteristics (curves)
DS12360 - Rev 4
page 5/11



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