STP50N65DM6 datasheet(2/11 Pages) STMICROELECTRONICS

部件名	STP50N65DM6

功能描述	N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package

PDF	11 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM(1)

Drain current (pulsed)

120

PTOT

Total power dissipation at TC = 25 °C

250

dv/dt (2)

Peak diode recovery voltage slope

100

V/ns

di/dt (2)

Peak diode recovery current slope

1000

A/µs

dv/dt(3)

MOSFET dv/dt ruggedness

100

V/ns

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Pulse width limited by safe operating area

2. ISD ≤ 33 A, VDS (peak) < V(BR)DSS, VDD= 400V

3. VDS ≤ 520 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.5

°C/W

Rthj-amb

Thermal resistance junction-amb

62.5

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

560

STP50N65DM6

Electrical ratings

DS12360 - Rev 4

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