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STP50N65DM6 数据表(PDF) 6 Page - STMicroelectronics

部件名 STP50N65DM6
功能描述  N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP50N65DM6 数据表(HTML) 6 Page - STMicroelectronics

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Figure 7. Typical capacitance characteristics
GADG090720191226CVR
10 4
10 3
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
CISS
COSS
CRSS
f = 1 MHz
Figure 8. Typical output capacitance stored energy
GADG090720191228EOS
24
20
16
12
8
4
0
0
100 200 300 400 500 600
EOSS
(µJ)
VDS (V)
Figure 9. Normalized gate threshold vs temperature
GADG090720191229VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75
-25
25
75
125
VGS(th)
(norm.)
Tj (°C)
ID = 250 µA
Figure 10. Normalized on-resistance vs temperature
GADG090720191229RON
2.5
2.0
1.5
1.0
0.5
0.0
-75
-25
25
75
125
RDS(on)
(norm.)
Tj (°C)
VGS = 10 V
Figure 11. Normalized breakdown voltage vs temperature
GADG090720191230VTH
1.10
1.05
1.00
0.95
0.90
0.85
-75
-25
25
75
125
V(BR)DSS
(norm.)
Tj (°C)
ID = 1 mA
Figure 12. Typical reverse diode forward characteristics
GADG090720191230SDF
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
5
10
15
20
25
30
VSD
(V)
ISD (A)
Tj = -50 °C
Tj = 25°C
Tj = 150°C
STP50N65DM6
Electrical characteristics (curves)
DS12360 - Rev 4
page 6/11



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