STP50N65DM6 datasheet(3/11 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4. On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 650 V

µA

VGS = 0 V, VDS = 650 V

TC = 125 °C (1)

100

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3.25

4.75

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 16.5 A

mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

2300

Coss

Output capacitance

165

Crss

Reverse transfer capacitance

Coss eq. (1)

Equivalent output capacitance

VDS = 0 to 520 V, VGS = 0 V

414

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

1.7

Ω

Total gate charge

VDD = 520 V, ID = 33 A

VGS= 0 to 10 V (see Figure 14. Test

circuit for gate charge behavior)

52.5

Qgs

Gate-source charge

14.5

Qgd

Gate-drain charge

22.5

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0

to 80% VDSS

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD= 325 V, ID = 16.5 A, RG = 4.7 Ω

VGS = 10 V (see Figure 13. Test circuit

for resistive load switching times and

Figure 18. Switching time waveform)

19.2

Rise time

td(off)

Turn-off delay time

59.6

Fall time

9.6

STP50N65DM6

Electrical characteristics

DS12360 - Rev 4

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