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STP50N65DM6 数据表(PDF) 1 Page - STMicroelectronics |
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STP50N65DM6 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 11 page ![]() 1 2 3 TO-220 TAB D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max. ID STP50N65DM6 650 V 91 mΩ 33 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STP50N65DM6 Product summary Order code STP50N65DM6 Marking 50N65DM6 Package TO-220 Packing Tube N-channel 650 V, 74 mΩ typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package STP50N65DM6 Datasheet DS12360 - Rev 4 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com |
类似零件编号 - STP50N65DM6 |
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类似说明 - STP50N65DM6 |
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