Figure 7. Collector current vs switching frequency

GADG090120201146CCS

120

100

80

60

40

20

0

10 0

10 1

10 2

IC

(A)

f (kHz)

Rectangular current shape

(duty cycle = 0.5, VCC = 400 V, RG = 2.2 Ω

VGE = 0/15 V, TJ = 175

℃

TC = 80 °C

TC = 100 °C

Figure 8. Forward bias safe operating area

GADG090120201142FSOA

10 2

10 1

10 0

10 0

10 1

10 2

IC

(A)

VCE (V)

μs

tp= 1

Figure 9. Transfer characteristics

GADG090120201147TCH

180

160

140

120

100

80

60

40

20

0

4

6

8

10

IC

(A)

VGE (V)

VCE = 6 V

TJ = 175 °C

TJ = 25 °C

Figure 10. Diode VF vs forward current

GADG130220201344RCC

2.8

2.4

2.0

1.6

1.2

0.8

25

50

75 100 125 150 175 200

Vf

(V)

If (A)

TJ = -40°C

TJ = 25°C

TJ = 175°C

Figure 11. Normalized VGE(th) vs junction temperature

IGBT090420181403NVGE

1.1

1.0

0.9

0.8

0.7

0.6

-50

0

50

100

150

VGE(th)

(norm.)

TJ (°C)

VCE = VGE

IC = 1 mA

Figure 12. Normalized V(BR)CES vs junction temperature

IGBT090420181404NVBR

1.08

1.04

1.00

0.96

0.92

-50

0

50

100

150

V(BR)CES

(norm.)

TJ (°C)

IC = 1 mA

STGWA75H65DFB2

Electrical characteristics (curves)

DS13215 - Rev 2

page 6/15