C(2, TAB)

E(3)

NG1E3C2T

G(1)

Features

•

Maximum junction temperature: TJ = 175 °C

•

Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A

•

Very fast and soft recovery co-packaged diode

•

Minimized tail current

•

Tight parameter distribution

•

Low thermal resistance

•

Positive VCE(sat) temperature coefficient

Applications

•

Welding

•

Power factor correction

•

UPS

•

Solar inverters

•

Chargers

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced

proprietary trench gate field-stop structure. The performance of the HB2 series is

optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current

values, as well as in terms of reduced switching energy. A very fast soft recovery

diode is co-packaged in antiparallel with the IGBT. The result is a product specifically

designed to maximize efficiency for a wide range of fast applications.

Product status link

STGWA75H65DFB2

Product summary

Order code

STGWA75H65DFB2

Marking

G75H65DFB2

Package

TO-247 long leads

Packing

Tube

Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT

in a TO

‑247 long leads package

STGWA75H65DFB2

Datasheet

DS13215 - Rev 2 - February 2020

For further information contact your local STMicroelectronics sales office.

www.st.com