Figure 19. Switching times vs collector current

IGBT100120201014STC

10 2

10 1

10 0

0

20

40

60

80

100

t

(ns)

IC (A)

2

2

td(off)

tf

td(on)

tr

Figure 20. Switching times vs gate resistance

GADG150120200938STR

10 2

10 1

10 0

0

5

10

15

20

t

(ns)

RG (Ω)

td(off)

tf

td(on)

tr

Figure 21. Reverse recovery current vs diode current

slope

GADG090120201200RRC

80

70

60

50

40

30

20

0

500 1000 1500 2000 2500 3000

Irrm

(A)

di/dt (A/µs)

VCC = 400 V, VGE = 15 V, IF = 75 A, TJ = 175 °C

Figure 22. Reverse recovery time vs diode current slope

GADG090120201200RRT

240

220

200

180

160

140

0

500 1000 1500 2000 2500 3000

trr

(ns)

VCC = 400 V, VGE = 15 V, IF = 75 A, TJ = 175 °C

di/dt (A/µs)

Figure 23. Reverse recovery charge vs diode current

slope

GADG090120201201RRQ

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

0

500 1000 1500 2000 2500 3000

VCC = 400 V, VGE = 15 V, IF = 75 A, TJ = 175 °C

di/dt (A/µs)

Qrr

(μC)

Figure 24. Reverse recovery energy vs diode current

slope

GADG090120201202RRE

1.5

1.2

0.9

0.6

0.3

0.0

0

500 1000 1500 2000 2500 3000

Err

(mJ)

STGWA75H65DFB2

Electrical characteristics (curves)

DS13215 - Rev 2

page 8/15