Figure 13. Capacitance variations

GADG090120201149CVR

10 3

10 2

10 1

10 -1

10 0

10 1

10 2

C

(pF)

VCE (V)

Cies

Coes

Cres

f = 1 MHz

Figure 14. Gate charge vs gate-emitter voltage

GADG090120201150GCGE

15

12

9

6

3

0

0

40

80

120

160

200

VGE

(V)

Qg (nC)

VCC = 520 V, IC = 75 A, IG = 12 mA

Figure 15. Switching energy vs collector current

GADG090120201151SLC

10

8

6

4

2

0

0

20

40

60

80 100 120 140

E

(mJ)

IC (A)

VCC = 400 V, RG = 2.2 Ω, VGE = 15 V, TJ = 175 °C

Etot

Eon

Eoff

Figure 16. Switching energy vs temperature

GADG090120201152SLT

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

50

100

150

E

(mJ)

TJ (°C)

Etot

Eon

Eoff

VCC = 400 V, IC = 75 A, Rg = 2.2 Ω, VGE = 15 V

Figure 17. Switching energy vs collector emitter voltage

GADG090120201154SLV

6

5

4

3

2

1

0

150

250

350

450

E

(mJ)

VCE (V)

Eoff

Eon

IC = 75 A, RG = 2.2 Ω, VGE = 15 V, TJ = 175 °C

Etot

Figure 18. Switching energy vs gate resistance

GADG090120201154SLG

6

5

4

3

2

1

0

5

10

15

20

E

(mJ)

RG (Ω)

Eoff

Eon

IC = 75 A, VCC = 400 V, VGE = 15 V, TJ = 175 °C

Etot

STGWA75H65DFB2

Electrical characteristics (curves)

DS13215 - Rev 2

page 7/15