Table 5. Switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCC = 400 V, IC = 75 A,

VGE = 15 V, RG = 2.2 Ω

(see Figure 27. Test circuit for

inductive load switching)

-

28

-

ns

tr

Current rise time

-

16

-

ns

Eon (1)

Turn-on switching energy

-

1428

-

μJ

td(off)

Turn-off delay time

-

100

-

ns

tf

Current fall time

-

36

-

ns

Eoff (2)

Turn-off switching energy

-

1050

-

µJ

td(on)

Turn-on delay time

VCC = 400 V, IC = 75 A,

VGE = 15 V, RG = 2.2 Ω,

TJ = 175 °C

(see Figure 27. Test circuit for

inductive load switching)

-

27

-

ns

tr

Current rise time

-

17

-

ns

Eon(1)

Turn-on switching energy

-

3090

-

μJ

td(off)

Turn-off delay time

-

123

-

ns

tf

Current fall time

-

87

-

ns

Eoff (2)

Turn-off switching energy

-

1770

-

µJ

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 75 A, VR = 400 V,

VGE = 15 V, di/dt = 1000 A/µs

(see Figure 30. Diode reverse

recovery waveform)

-

88

-

ns

Qrr

Reverse recovery charge

-

923

-

nC

Irrm

Reverse recovery current

-

26

-

A

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

-

1166

-

A/µs

Err

Reverse recovery energy

-

144

-

µJ

trr

Reverse recovery time

IF = 75 A, VR = 400 V,

VGE = 15 V, di/dt = 1000 A/µs,

TJ = 175 °C

(see Figure 30. Diode reverse

recovery waveform)

-

162

-

ns

Qrr

Reverse recovery charge

-

5431

-

nC

Irrm

Reverse recovery current

-

60

-

A

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

-

800

-

A/µs

Err

Reverse recovery energy

-

1064

-

µJ

STGWA75H65DFB2

Electrical characteristics

DS13215 - Rev 2

page 4/15