Figure 10. AC measurement I/O waveform

0.8VCC

0.2VCC

0.7VCC

0.3V CC

Input and output

Timing reference levels

Input voltage levels

Table 9. Input parameters

Symbol

Parameter(1)

Test condition

Min.

Max.

Unit

CIN

Input capacitance (SDA)

-

-

8

pF

CIN

Input capacitance (other pins)

-

-

6

ZL

Input impedance (WC)

VIN < 0.3 VCC

30

-

kΩ

ZH

VIN > 0.7 VCC

500

-

1. Characterized only, not tested in production.

Table 10. Cycling performance

Symbol

Parameter

Test condition

Max

Unit

Ncycle

Write cycle endurance (1)

TA ≤ 25 °C, VCC(min) < VCC < VCC(max)

4,000,000

Write cycle (2)

TA = 85 °C, VCC(min) < VCC < VCC(max)

1,200,000

1. The write cycle endurance is defined by characterization and qualification.

2. A write cycle is executed when either a page write or a byte write instruction is decoded.

Table 11. Memory cell data retention

Parameter

Test condition

Min.

Unit

Data retention (1)

TA = 55 °C

200

Year

1. The data retention behaviour is checked in production, while the data retention limit defined in this table is extracted from

characterization and qualification results.

M24C16-W M24C16-R M24C16-F

DC and AC parameters

DS9194 - Rev 11

page 17/40