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M24C16-R 数据表(PDF) 20 Page - STMicroelectronics |
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M24C16-R 数据表(HTML) 20 Page - STMicroelectronics |
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20 / 40 page ![]() Table 14. DC characteristics (M24C16-F device grade 6) Symbol Parameter Test conditions(1) (in addition to those in Table 7 and Table 8) Min. Max. Unit ILI Input leakage current (SCL, SDA) VIN = VSS or VCC, device in standby mode - ± 2 µA ILO Output leakage current SDA in Hi-Z, external voltage applied on SDA: VSS or VCC - ± 2 ICC Supply current (Read) VCC = 1.6 V or 1.7 V, fc= 400 kHz - 0.8 mA ICC0 Supply current (Write) Value overaged over tW, VCC ≤ 2.5 V - 1(2) ICC1 Standby supply current Device not selected(3), VIN = VSS or VCC, VCC ≤ 1.8 V - 1 µA VIL Input low voltage (SCL, SDA, WC) 2.5 V ≤ VCC –0.45 0.3 VCC V VCC < 2.5 V –0.45 0.25 VCC VIH Input high voltage (SCL, SDA) VCC < 2.5 V 0.75 VCC 6.5 Input high voltage (WC) VCC < 2.5 V 0.75 VCC VCC+0.6 VOL Output low voltage IOL = 0.7 mA, VCC ≤ 1.8 V - 0.2 1. If the application uses the voltage range F device with 1.8 V ≤ Vcc ≤ 5.5 V refer to Table 12 instead of this table. 2. Characterized only, not tested in production. 3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction). M24C16-W M24C16-R M24C16-F DC and AC parameters DS9194 - Rev 11 page 20/40 |
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