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M28W320CT 数据表(PDF) 10 Page - STMicroelectronics

部件名 M28W320CT
功能描述  32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
PDF  42 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M28W320CT 数据表(HTML) 10 Page - STMicroelectronics

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Status Register bit b7 returns ’0’ while the erasure
is in progress and ’1’ when it has completed. After
completion the Status Register bit b5 returns ’1’ if
there has been an Erase Failure. Status register
bit b1 returns ’1’ if the user is attempting to pro-
gram a protected block. Status Register bit b3 re-
turns a ’1’ if VPP is below VPPLK.
Erase aborts if RP turns to VIL. As data integrity
cannot be guaranteed when the erase operation is
aborted, the erase must be repeated. A Clear Sta-
tus Register instruction must be issued to reset b1,
b3, b4 and b5 of the Status Register. During the
execution of the erase by the P/E.C., the memory
accepts only the RSR (Read Status Register) and
PES (Program/Erase Suspend) instructions.
Table 10. Instructions
Note: 1. X = Don’t Care.
2. The first cycle of the RD, RSR, RSIG or RCFI instruction is followed by read operations in the memory array or special register. Any
number of read cycle can occur after one command cycle.
3. The signature address recognized are listed in the Tables 6, 7 and 8.
4. Address 1 and Address 2 must be consecutive address differing only for address bit A0.
5. A read cycle after a CLSR instruction wil l output the memory array.
Mne-
mon ic
Instruction
Cycles
1st Cycle
2nd Cycle
3nd Cycle
Operat.
Addr. (1)
Data
Operat.
Addr.
Data
Operat.
Addr.
Data
RD
Read Memory
Array
1+
Write
X
FFh
Read
(2)
Read
Address
Data
RSR
Read Status
Register
1+
Write
X
70h
Read (2)
X
Status
Register
RSIG
Read
Electronic
Signature
1+
Write
X
90h or
98h
Read (2)
Signature
Address
(3)
Data
RCFI
Read CFI
1+
Write
55h
98h or
90h
Read (2)
CFI
Address
Query
EE
Erase
2
Write
X
20h
Write
Block
Address
D0h
PG
Program
2
Write
X
40h or
10h
Write
Address
Data
Input
DPG (4)
Double Word
Program
3
Write
X
30h
Write
Address 1
Data
Input
Write
Address 2
Data
Input
CLRS (5)
Clear Status
Register
1
Write
X
50h
PES
Program/
Erase
Suspend
1
Write
X
B0h
PER
Program/
Erase
Resume
1
Write
X
D0h
BP
Block Protect
2
Write
X
60h
Write
Block
Address
01h
BU
Block
Unprotect
2
Write
X
60h
Write
Block
Address
D0h
BL
Block Lock
2
Write
X
60h
Write
Block
Address
2Fh
PRP
Protection
Register
Program
2
Write
X
C0h
Write
Address
Data
Input
Erase (EE)
Block erasure sets all the bits within the selected
block to ’1’. One block at a time can be erased. It
is not necessary to program the block with 00h as
the P/E.C. will do it automatically before erasing.
This instruction uses two write cycles. The first
command written is the Erase Set up command
20h. The second command is the Erase Confirm
command D0h. An address within the block to be
erased is given and latched into the memory dur-
ing the input of the second command. If the sec-
ond command given is not an erase confirm, the
status register bits b4 and b5 are set and the in-
struction aborts.
Read operations output the status register after
erasure has started.



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