M28W320CT datasheet(18/42 Pages) STMICROELECTRONICS

18 / 42 page

M28W320CT, M28W320CB

18/42

Table 17. Device Geometry Definition

Offset Word

Mode

Data

Description

27h

0016h

Device Size = 2n in number of bytes

28h

0001h

Flash Device Interface Code description: Asynchronous x16

29h

0000h

2Ah

0000h

Maximum number of bytes in multi-byte program or page = 2n

2Bh

0000h

2Ch

0002h

Number of Erase Block Regions within device

bit 7 to 0 = x = number of Erase Block Regions

Note:1. x = 0 means no erase blocking, i.e. the device erases at once in ”bulk.”

2. x specifies the number of regions within the device containing one or more con-

tiguous Erase Blocks of the same size.

For example, a 128KB device (1Mb)

having blocking of 16KB, 8KB, four 2KB, two 16KB, and one 64KB is consid-

ered to have 5 Erase Block Regions.

Even though two regions both contain

16KB blocks, the fact that they are not contiguous means they are separate

Erase Block Regions.

3. By definition, symmetrically block devices have only one blocking region.

M28W320CT

Erase Block Region Information

bit 31 to 16 = z, where the Erase Block(s) within this Region are (z) times 256 bytes in

size. The value z = 0 is used for 128 byte block size.

e.g. for 64KB block size, z = 0100h = 256 => 256 * 256 = 64K

bit 15 to 0 = y, where y+1 = Number of Erase Blocks of identical size within the Erase

Block Region:

e.g.

y = D15-D0 = FFFFh => y+1 = 64K blocks [maximum number]

y = 0 means no blocking (# blocks = y+1 = ”1 block”)

Note: y = 0 value must be used with number of block regions of one as indicated

by (x) = 0

2Dh

001Eh

2Eh

0000h

2Fh

0000h

30h

0001h

31h

0007h

32h

0000h

33h

0020h

34h

0000h

M28W320CB

2Dh

0007h

2Eh

0000h

2Fh

0020h

30h

0000h

31h

001Eh

32h

0000h

33h

0000h

34h

0001h

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