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STM32G0C1NET6XTR 数据表(PDF) 90 Page - STMicroelectronics |
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STM32G0C1NET6XTR 数据表(HTML) 90 Page - STMicroelectronics |
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90 / 159 page  Electrical characteristics STM32G0C1xC/xE 90/159 DS13564 Rev 4 5.3.9 PLL characteristics The parameters given in Table 47 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 24: General operating conditions. 5.3.10 Flash memory characteristics Table 47. PLL characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fPLL_IN PLL input clock frequency(2) -2.66 - 16 MHz DPLL_IN PLL input clock duty cycle - 45 - 55 % fPLL_P_OUT PLL multiplier output clock P Voltage scaling Range 1 3.09 - 122 MHz Voltage scaling Range 2 3.09 - 40 fPLL_Q_OUT PLL multiplier output clock Q Voltage scaling Range 1 12 - 128 MHz Voltage scaling Range 2 12 - 33 fPLL_R_OUT PLL multiplier output clock R Voltage scaling Range 1 12 - 64 MHz Voltage scaling Range 2 12 - 16 fVCO_OUT PLL VCO output Voltage scaling Range 1 96 - 344 MHz Voltage scaling Range 2 96 - 128 tLOCK PLL lock time - - 15 40 μs Jitter RMS cycle-to-cycle jitter System clock 56 MHz -50 - ±ps RMS period jitter - 40 - IDD(PLL) PLL power consumption on VDD(1) VCO freq = 96 MHz - 200 260 μA VCO freq = 192 MHz - 300 380 VCO freq = 344 MHz - 520 650 1. Guaranteed by design. 2. Make sure to use the appropriate division factor M to obtain the specified PLL input clock values. Table 48. Flash memory characteristics(1) Symbol Parameter Conditions Typ Max Unit tprog 64-bit programming time - 85 125 µs tprog_row Row (32 double word) programming time Normal programming 2.7 4.6 ms Fast programming 1.7 2.8 tprog_page Page (2 Kbyte) programming time Normal programming 21.8 36.6 Fast programming 13.7 22.4 tERASE Page (2 Kbyte) erase time - 22.0 40.0 tprog_bank Bank (512 Kbyte(2)) programming time Normal programming 2.8 4.7 s Fast programming 1.8 2.9 tME Mass erase time - 22.1 40.1 ms |
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