STM32G0C1NET3X datasheet(75/159 Pages) STMICROELECTRONICS

75 / 159 page

DS13564 Rev 4

75/159

STM32G0C1xC/xE

Electrical characteristics

124

3. Reduced code used for characterization results provided in Table 28.

Table 30. Current consumption in Sleep and Low-power sleep modes

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

General

Voltage

scaling

fHCLK

°C

125

°C

130

°C

IDD(Sleep)

Supply

current in

Sleep

mode

Flash memory enabled;

fHCLK = fHSE bypass

(≤16 MHz; PLL

disabled),

fHCLK = fPLLRCLK

(>16 MHz; PLL

enabled);

All peripherals disabled

Range 1

64 MHz

1.9

2.0

2.6

2.5

2.6

3.3

56 MHz

1.7

1.8

2.4

2.2

2.4

3.2

48 MHz

1.5

1.6

2.2

1.9

2.1

2.8

32 MHz

1.1

1.2

1.8

1.4

1.6

2.3

24 MHz

0.9

1.0

1.6

1.2

1.3

2.1

16 MHz

0.5

0.6

1.2

0.7

0.9

1.6

Range 2

16 MHz

0.4

0.6

1.0

0.6

0.7

1.4

8 MHz

0.3

0.4

0.9

0.4

0.5

1.2

2 MHz

0.2

0.3

0.7

0.2

0.4

1.0

IDD(LPSleep)

Supply

current in

Low-power

sleep mode

Flash memory disabled;

PLL disabled;

fHCLK = fHSE bypass (> 32 kHz),

fHCLK = fLSE bypass (= 32 kHz);

All peripherals disabled

2 MHz

200

705

175 500 1325

µA

1 MHz

175

685

145 438 1285

500 kHz

165

670

130 413 1255

125 kHz

155

665

105 388 1250

32 kHz

150

660

375 1210

1. Based on characterization results, not tested in production.

Table 31. Current consumption in Stop 0 mode

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

HSI kernel

VDD

25°C

85°C

125°C

25°C

85°C

130°C

IDD(Stop 0)

Supply

current in

Stop 0

mode

Enabled

1.8 V

290

370

675

370

470

850

µA

2.4 V

295

370

680

370

470

870

3 V

295

375

695

375

475

930

3.6 V

300

380

695

375

475

1050

Disabled

1.8 V

100

190

505

180

290

680

2.4 V

100

195

510

180

290

685

3 V

105

195

525

180

295

695

3.6 V

105

200

530

185

305

830

1. Based on characterization results, not tested in production.

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