STM32G0C1NET3X datasheet(91/159 Pages) STMICROELECTRONICS

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DS13564 Rev 4

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STM32G0C1xC/xE

Electrical characteristics

124

5.3.11

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

•

Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•

FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and

VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is

compliant with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in Table 50. They are based on the EMS levels and classes

defined in application note AN1709.

IDD(FlashA) Average consumption from VDD

Programming

Page erase

Mass erase

IDD(FlashP) Maximum current (peak)

Programming, 2 µs peak

duration

Erase, 41 µs peak duration

1. Guaranteed by design.

2. Values provided also apply to devices with less Flash memory than one 512 Kbyte bank

Table 48. Flash memory characteristics(1) (continued)

Symbol

Parameter

Conditions

Typ

Max

Unit

Table 49. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min(1)

Unit

NEND

Endurance

TA = -40 to +105 °C

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

Years

1 kcycle(2) at TA = 105 °C

1 kcycle(2) at TA = 125 °C

10 kcycles(2) at TA = 55 °C

10 kcycles(2) at TA = 85 °C

10 kcycles(2) at TA = 105 °C

1. Guaranteed by characterization results.

2. Cycling performed over the whole temperature range.

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