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STM32G0C1NET3X 数据表(PDF) 94 Page - STMicroelectronics

部件名 STM32G0C1NET3X
功能描述  Arm® Cortex®-M0 32-bit MCU, up to 512KB Flash, 144KB RAM,6x USART, timers, ADC, DAC, comm. I/Fs, AES, RNG, 1.7-3.6V
PDF  159 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32G0C1NET3X 数据表(HTML) 94 Page - STMicroelectronics

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Electrical characteristics
STM32G0C1xC/xE
94/159
DS13564 Rev 4
5.3.13
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDDIOx (for standard, 3.3 V-capable I/O pins) should be avoided during normal
product operation. However, in order to give an indication of the robustness of the
microcontroller in cases when abnormal injection accidentally happens, susceptibility tests
are performed on a sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out-of-range parameter: ADC error above a certain limit
(higher than 5 LSB TUE), induced leakage current on adjacent pins out of conventional
limits (-5 µA/+0 µA range) or other functional failure (for example reset occurrence or
oscillator frequency deviation).
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.
Table 54. I/O current injection susceptibility(1)
Symbol
Description
Functional susceptibility
Unit
Negative
injection
Positive
injection
IINJ
Injected current on
pin
All except PA4, PA5, PA6, PB0,
PB3, and PC0
-5
N/A
mA
PA4, PA5
-5
0
mA
PA6, PB0, PB3, and PC0
0
N/A
mA
1. Based on characterization results, not tested in production.



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