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STM32G0C1NET3 数据表(PDF) 67 Page - STMicroelectronics |
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STM32G0C1NET3 数据表(HTML) 67 Page - STMicroelectronics |
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67 / 159 page ![]() DS13564 Rev 4 67/159 STM32G0C1xC/xE Electrical characteristics 124 5.1.7 Current consumption measurement 5.2 Absolute maximum ratings Stresses above the absolute maximum ratings listed in Table 21, Table 22 and Table 23 may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. All voltages are defined with respect to VSS. Figure 16. Current consumption measurement scheme MSv66840V1 IDDVBAT VBAT IDD VDD (VDDA) VBAT VDD/VDDA VDDIO2 Table 21. Voltage characteristics Symbol Ratings Min Max Unit VDD External supply voltage -0.3 4.0 V VDDIO2 External supply voltage for selected I/Os -0.3 4.0 VBAT External supply voltage on VBAT pin -0.3 4.0 VREF+ External voltage on VREF+ pin -0.3 Min(VDD + 0.4, 4.0) VIN(1) Input voltage on FT_xx pins except FT_c -0.3 VDD + 4.0(2) Input voltage on FT_c pins -0.3 5.5 Input voltage on any other pin -0.3 4.0 1. Refer to Table 22 for the maximum allowed injected current values. 2. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled. |
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