数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

SL2ICS20 数据表(PDF) 3 Page - NXP Semiconductors

部件名 SL2ICS20
功能描述  SL2 ICS 20 I?CODE SLI Label IC Bumped Wafer Specification
PDF  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

SL2ICS20 数据表(HTML) 3 Page - NXP Semiconductors

  SL2ICS20 Datasheet HTML 1Page - NXP Semiconductors SL2ICS20 Datasheet HTML 2Page - NXP Semiconductors SL2ICS20 Datasheet HTML 3Page - NXP Semiconductors SL2ICS20 Datasheet HTML 4Page - NXP Semiconductors SL2ICS20 Datasheet HTML 5Page - NXP Semiconductors SL2ICS20 Datasheet HTML 6Page - NXP Semiconductors SL2ICS20 Datasheet HTML 7Page - NXP Semiconductors SL2ICS20 Datasheet HTML 8Page - NXP Semiconductors SL2ICS20 Datasheet HTML 9Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 12 page
background image
Philips Semiconductors
Product Specification Rev.3.0 December 2002
Bumped Wafer Specification
SL2 ICS 20
3
1 SCOPE
This specification describes the electrical, physical
and dimensional properties of Au-bumped sawn
wafers on FFC of I•CODE
1
SLI Label ICs on a
Philips C075EE process and is the base for delivery
of tested I•CODE SLI Label ICs.
2 REFERENCE DOCUMENTS
2.1 Philips Documents
MIL-STD 883D Method 3023
MIL-STD 883D Method 3015
SNW-FQ-627
PICTOH-QS007
General Specification for 8” Wafer
General Quality Specification
I•CODE SLI Label IC, Functional Specification
Application Note Coil Design Guide
Specification of the IBIS Wafermap
3 MECHANICAL SPECIFICATION
3.1 Wafer
Diameter:
8”
Thickness:
150 µm ± 15 µm
Flatness:
max. tbf
3.2 Wafer Backside
Material:
Si
Treatment:
ground + stress releave
Roughness:
Ra max. 0.5 µm
Rt max. 5 µm
3.3 Chip Dimensions
Chip size:
900 x 780 µm
Scribe lines:
80 / 80 µm
3.4 Passivation
Type:
sandwich structure
Material:
PSG / Nitride (on top)
Thickness:
500 nm / 600 nm
1
I
•CODE is a registered trademark of Philips Electronics N.V.
3.5 Au Bump
Bump material:
> 99.9% pure Au
Bump hardness:
35 – 80 HV 0.005
Bump shear strength:
> 70 MPa
Bump height:
18 µm
Bump height uniformity:
-
within a die:
± 2 µm
-
within a wafer:
± 3 µm
-
wafer to wafer:
± 4 µm
Bump flatness:
± 1.5 µm
Bump size:
-
LA, LB
92 x 92 µm
-
VSS
2, TESTIO
62 x 62 µm
Pad size (no bump!)
-
LA, LB
78 x 78 µm
-
VSS
3, TESTIO
48 x 48 µm
Bump size variation:
± 5 µm
Under bump metallisation:
sputtered TiW
4 FAIL-DIE IDENTIFICATION
Every die is electrically tested according to data
sheet.
Identification
of
chips
with
electrical
parameters not conform with the data sheet is done
by inking and wafer mapping (all dies at wafer
periphery are identified as ‘FAIL’).
The ink information refers to unsawn wafers. At
sawn wafers (on FFC) additional ICs are be marked
as ‘FAIL’ in the wafer map if damaged during the
sawing process. These ICs will not be inked.
4.1 Wafer Mapping
Wafer mapping for failed die information is available
on Floppy-Disk.
Format: IBIS format
5 ORDERING INFORMATION
5.1 Bumped die on sawn wafer
Order Code:
SL2 ICS20 01DW/V4D
12NC:
9352 716 15005
2 VSS is conntected to substrate.
3 VSS is conntected to substrate.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com