Philips Semiconductors

Product Specification Rev.3.0 December 2002

Bumped Wafer Specification

SL2 ICS 20

6

7.3 ELECTRICAL CHARACTERISTICS

Tjop = - 25 to +85 °C

SYMBOL

PARAMETER

TEST

CONDITIONS

MIN

TYP

1

MAX

UNIT

Cres

Input Capacitance between LA - LB

2

VLA-LB = 2 Vrms

22.3

23.5

24.7

pF

Pmin

Minimum Operating Supply Power

3

280

µW

m

Modulation of RF Voltage for

Demodulator Response

m

V

- V

V

+ V

max

min

max

min

=

**

**

**

%

tP sm

Modulation Pulse Length

of RF Voltage

**

**

**

µs

tD

Demodulator Response Time

m

≥ 10 %, 100%

**

**

**

µs

Rmod

Load Modulation

**

**

**

Ω

tret

EEPROM Data Retention

Tamb ≤ 55 °C

10

Years

nwrite

EEPROM Write Endurance

100 000

Cycles

NOTES:

1. Typical ratings are not guaranteed. These values listed are at room temperature.

2. Measured with an HP4285A LCR meter at 13.56 MHz.

3. Including losses in resonant capacitor and rectifier.

** : refer to ISO/IEC 15693-2 and 15693-3 including pulse shapes and tolerances; proper coil design assumed