Philips Semiconductors

Product Specification Rev.3.0 December 2002

Bumped Wafer Specification

SL2 ICS 20

5

7 ELECTRICAL SPECIFICATIONS

7.1 ABSOLUTE MAXIMUM RATINGS

1, 2

SYMBOL

PARAMETER

TEST

CONDITIONS

RATING

UNIT

Tstg

Storage Temperature Range

- 55 to +140

°C

Tj

Junction Temperature

- 55 to +140

°C

VESD

ESD Voltage Immunity

MIL-STD-883D,

Method 3015.7,

Human Body Model

± 2

kVpeak

Imax LA-LB Maximum Input Peak Current

± 60

mApeak

NOTES:

1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these or any conditions other than those described in the Operating Conditions and

Electrical Characteristics section of this specification is not implied.

2. This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive

static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima.

7.2 OPERATING CONDITIONS

SYMBOL

PARAMETER

TEST

CONDITIONS

MIN

TYP

1

MAX

UNIT

Tj op

Operating Junction Temperature

- 25

+

85

°C

ILA-LB

Input Current

2

30

mArms

VLA-LB

Minimum Supply Voltage

for READ/WRITE/EAS

± 2.5

± 2.6

± 2.9

Vrms

fop

Operating Frequency

3

13.553

13.560

13.567

MHz

NOTES:

1. Typical ratings are not guaranteed. These values listed are at room temperature.

2. The voltage between LA and LB is limited by the on-chip voltage limitation circuitry (corresponding to parameter ILA-LB).

3. Bandwidth limitation (±7 kHz) according to ISM band regulations.