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ADL8112ACCZ-R7 数据表(PDF) 23 Page - Analog Devices

部件名 ADL8112ACCZ-R7
功能描述  10 MHz to 26.5 GHz Amplifier with Bypass Switches
PDF  27 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADL8112ACCZ-R7 数据表(HTML) 23 Page - Analog Devices

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Data Sheet
ADL8112
THEORY OF OPERATION
analog.com
Rev. 0 | 23 of 27
The ADL8112 integrates an amplifier with two switching networks
located at the RF input and output. The amplifier, which is internally
AC-coupled on its input and output, uses a gallium arsenide (GaAs)
LNA die. The switching network employs robust silicon-on-insulator
(SOI) technology for fast switching and a short settling time. This
integrated solution has four different signal path modes available:
an internal amplifier, an internal bypass, External Bypass A, and
External Bypass B. Signal path modes are controlled through the
VA and VB digital pins. The internal amplifier is biased up by
applying 8.5 V to VDD1 and by connecting a bias resistor between
VDD1 and the RBIAS pin. The reflective switch network is powered
by applying +3.3 V and −3.3 V to VDD2 and VSS2, respectively. DC
bias to the switches is independent of the LNA. Turning off the bias
to VDD1 that controls the LNA, provides better isolation between
RF ports.
SIGNAL PATH MODES FOR DIGITAL CONTROL
INPUTS
Figure 78. Internal Amplifier Mode, VA = 0 V and VB = 0 V
Figure 79. Internal Bypass Mode, VA = 3.3 V and VB = 3.3 V
Figure 80. External Bypass A Mode, VA = 0 V and VB = 3.3 V
Figure 81. External Bypass B Mode, VA = 3.3 V and VB = 0 V
Table 12. Truth Table
Mode Name
Digital Control
Signal Path Mode
VA
VB
Internal Amplifier
Low
Low
RFIN to RFOUT through the amplifier path
Internal Bypass
High
High
RFIN to RFOUT through the bypass path
External Bypass A
Low
High
RFIN to OUT_A, IN_A to RFOUT
External Bypass B
High
Low
RFIN to OUT_B, IN_B to RFOUT



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