ADIS16250SLASHPCBZ datasheet(4/20 Pages) AD

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ADIS16250

Rev. 0 | Page 4 of 20

Parameter

Conditions

Min

Typ

Max

Unit

DAC OUTPUT

5 kΩ/100 pF to GND

Resolution

Bits

Relative Accuracy

For Code 101 to Code 4095

LSB

Differential Nonlinearity

LSB

Offset Error

±5

Gain Error

±0.5

Output Range

0 to 2.5

Output Impedance

Output Settling Time

μs

LOGIC INPUTS

Input High Voltage, VINH

2.0

Input Low Voltage, VINL

0.8

For CS signal when used to wake up from

SLEEP mode

0.55

Logic 1 Input Current, IINH

VIH = 3.3 V

±0.2

±10

μA

Logic 0 Input Current, IINL

VIL = 0 V

All except RST

−40

−60

μA

RST 2

−1

Input Capacitance, CIN

DIGITAL OUTPUTS

Output High Voltage, VOH

ISOURCE = 1.6 mA

2.4

Output Low Voltage, VOL

ISINK = 1.6 mA

0.4

SLEEP TIMER

Timeout Period3

0.5

128

Sec

FLASH MEMORY

Endurance4

20,000

Cycles

Data Retention5

TJ = 55°C

Years

CONVERSION RATE

Minimum Conversion Time

3.906

Maximum Conversion Time

7.75

Sec

Maximum Throughput Rate

256

SPS

Minimum Throughput Rate

0.129

SPS

POWER SUPPLY

Operating Voltage Range VCC

4.75

5.0

5.25

Power Supply Current

Normal mode at 25°C

Fast mode at 25°C

Sleep mode at 25°C

425

μA

1 The sensor is capable of ±600°/sec but the specifications herein are for ±320°/sec only.

2 The RST pin has an internal pull-up.

3 Guaranteed by design.

4 Endurance is qualified as per JEDEC Standard 22 Method A117 and measured at −40°C, +25°C, +85°C, and +125°C.

5 Retention lifetime equivalent at junction temperature (TJ) 55°C as per JEDEC Standard 22 Method A117. Retention lifetime decreases with junction temperature.

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