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ADRF5347BCCZN-R7 数据表(PDF) 3 Page - Analog Devices

部件名 ADRF5347BCCZN-R7
功能描述  High Linearity, Silicon SP4T Switch, 1.8 GHz to 3.8 GHz
PDF  15 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5347BCCZN-R7 数据表(HTML) 3 Page - Analog Devices

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Data Sheet
ADRF5347
SPECIFICATIONS
analog.com
Rev. 0 | 3 of 15
Supply voltages (VDD) = 5 V, (VSS) = −3.4 V, control voltage (VCTL) = 0 V or 3.3 V, TA = 25°C, and it is a 50 Ω system, unless otherwise noted.
Table 1. Specifications
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
FREQUENCY RANGE
1.8
3.8
GHz
INSERTION LOSS
Between RFC and RF1 to RF4 (On)
2.3 GHz to 2.8 GHz
0.35
dB
3.3 GHz to 3.8 GHz
0.42
dB
ISOLATION
Between RFC and RF1 to RF4 (Off)
2.3 GHz to 2.8 GHz
30
dB
3.3 GHz to 3.8 GHz
27
dB
RETURN LOSS
RFC and RF1 to RF4 (On)
2.3 GHz to 2.8 GHz
25
dB
3.3 GHz to 3.8 GHz
25
dB
TRANSMISSION PHASE1
RFC to RF1/RF4
at 3.8 GHz
-63
Degrees
RFC to RF2/RF3
at 3.8 GHz
-66
Degrees
RELATIVE PHASE VARIANCE
TCASE = -40°C to 105°C
2
Degrees
SWITCHING
Rise and Fall Time (tRISE, tFALL)
90% to 10% of RF output (RFOUT)
300
ns
On and Off Time (tON, tOFF)
50% VCTL to 10% to 90% of RFOUT
650
ns
0.1 dB Settling Time
50% VCTL to 0.1 dB of final RFOUT2
720
ns
INPUT LINEARITY
0.1 dB Power Compression (P0.1dB)
LTE (10 dB peak average ratio (PAR))
>50
dBm
Third-Order Intercept (IP3)
Continuous Wave
Two-tone input power = 30 dBm continuous wave per tone
84
dBm
LTE Signal
Two LTE 10 MHz E-TM 1.1 carriers, each having 34 dBm
96
dBc
Harmonic Distortion
Second Harmonic
Single LTE 10 MHz E-TM 1.1 carrier having 37dBm
100
dBc
Third Harmonic
Single LTE 10 MHz E-TM 1.1 carrier having 37dBm
87
dBc
SUPPLY CURRENT
VDD and VSS
Positive Supply Current (IDD)
2.4
mA
Negative Supply Current (ISS)
0.4
mA
DIGITAL CONTROL INPUTS
Voltage
0
0.7
V
Low Voltage (VIL)
High Voltage (VIH)
1.07
3.45
V
Current
Low (IINL)
LS
<1
μA
V1 and V2
<1
μA
High (IINH)
LS
6.6
μA
V1 and V2
6.6
μA
RECOMMENDED OPERATING CONDITIONS
Positive Supply Voltage (VDD)
4.75
5.0
5.25
V
Negative Supply Voltage (VSS)
-3.6
-3.4
-3.2
V
Control Voltage (VCTL)
0
3.45
V
RF Input Power
Through Power
TCASE = 105°C, life time
Continuous Wave
39
dBm
LTE Signal
10 dB PAR



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