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ADRF5347BCCZN-R7 数据表(PDF) 4 Page - Analog Devices |
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ADRF5347BCCZN-R7 数据表(HTML) 4 Page - Analog Devices |
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4 / 15 page ![]() Data Sheet ADRF5347 SPECIFICATIONS analog.com Rev. 0 | 4 of 15 Table 1. Specifications (Continued) Parameter Test Conditions/Comments Min Typ Max Unit Average 39 dBm Peak 49 dBm Reflected Power TCASE = 105°C, life time Continuous Wave 27 dBm LTE Signal Input signal is 37 dBm LTE 10 MHz E-TM 1.1 carrier with 8 dB PAR Average 27 dBm Peak 35 dBm Hot Switching Power TCASE = 105°C, life time Continuous Wave 37 dBm LTE Signal Average 37 dBm Peak 47 dBm Through Power TCASE = 105°C, single event (<10 sec) Continuous Wave 40 dBm LTE Signal 10 dB PAR Average 40 dBm Peak 50 dBm Reflected Power TCASE = 105°C, single event (<10 sec) Continuous Wave 32 dBm LTE Signal Input signal is 37 dBm LTE 10 MHz E-TM 1.1 carrier with 8 dB PAR Average 32 dBm Peak 40 dBm Case Temperature (TCASE) –40 +105 °C 1 See Figure 7 and Figure 10 for frequency behavior. 2 50% VCTL to gain settled to IL +/- 0.1 dB for an LTE signal of 37 dBm(avg.)/45 dBm(peak). |
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