Data Sheet

ADRF5347

High Linearity, Silicon SP4T Switch, 1.8 GHz to 3.8 GHz

Rev. 0

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FEATURES

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Low insertion loss

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0.35 dB to 2.8 GHz typical

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0.42 dB to 3.8 GHz typical

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High input linearity, IP3: 84 dBm typical

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High power handling at TCASE = 105°C

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Long-term (>10 years) average

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Continuous wave power: 39 dBm

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LTE signal

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Average power: 39 dBm

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Peak power: 49 dBm

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Fast 0.1 dB settling time : 720 ns typical

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ESD ratings

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HBM: 1000 V, Class 1B

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CDM: 750 V, Class C4

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Positive control, LVCMOS-/LVTTL- compatible

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4 mm x 4 mm, 20-terminal LGA package

APPLICATIONS

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5G antenna tilting and beamforming

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Wireless infrastructure

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Military and high reliability applications

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Test equipment

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Pin diode replacement

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADRF5347 is a high linearity, reflective, single-pole, four-throw

(SP4T) switch manufactured in the silicon process.

The ADRF5347 operates from 1.8 GHz to 3.8 GHz with a typical

insertion loss lower than 0.42 dB and a typical input IP3 of 84 dBm.

The device has an RF input power handling capability of 39 dBm for

continuous wave signals and 39 dBm average and 49 dBm peak for

long-term evolution (LTE) signals.

The ADRF5347 draws a current of 2.5 mA on the positive supply

of +5.0 V and 0.4 mA on the negative supply of −3.4 V. The device

employs low voltage complementary metal-oxide semiconductor

(LVCMOS)-/low voltage transistor-to-transistor logic (LVTTL)- com-

patible controls.

The ADRF5347 comes in a 4 mm × 4 mm, 20-terminal, RoHS-com-

pliant, land grid array (LGA) package and operates between −40°C

to +105°C.

Excellent return loss and IP3 enable ADRF5347 to be used in

back-to-back configuration for phase shifting architectures. See the

Back-to-Back Phase Shifter Reference Design section for more

information.