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MP8861 数据表(PDF) 4 Page - Monolithic Power Systems |
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MP8861 数据表(HTML) 4 Page - Monolithic Power Systems |
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4 / 37 page ![]() MP8861 – 2.85V - 18V, 6A, SYNCHRONOUS, STEP-DOWN CONVERTER MP8861 Rev. 1.1 www.MonolithicPower.com 4 5/28/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. ELECTRICAL CHARACTERISTICS VIN = 12V, TJ = -40°C to +125°C (5), typical value is tested at TJ = +25°C, unless otherwise noted. Parameter Symbol Condition Min Typ Max Units Supply current (shutdown) IIN VEN = 0V 2.1 4 μA Supply current (quiescent) Iq No switching, FB = 105% VREF, PFM mode 420 600 μA HS switch on resistance HSRDS(ON) VBST - SW = 3.3V 29 mΩ LS switch on resistance LSRDS(ON) VCC = 3.3V 14 mΩ Switch leakage SWLKG VEN = 0V, VSW = 12V, TJ = +25°C 1 μA Low-side valley current limit ILIMIT_L Adjustable by I2C 8.5 A Low-side negative current limit ILIMIT_LN In forced PWM mode or OVP state -3 A Low-side ZCD threshold IZCD TJ = +25°C 200 mA Switching frequency fSW1 VIN = 12V, VOUT = 1V 400 500 600 kHz fSW2 VIN = 12V, VOUT = 5V 400 500 600 kHz Minimum off time (6) τOFF_MIN 185 ns Minimum on time (6) τON_MIN VOUT = 0.6V 50 ns Reference voltage Vref TJ = 25°C -1% 720 +1% mV -40°C < TJ < 125°C (5) -1.5% 720 +1.5% FB current IFB VFB = 740mV 10 50 nA A0 voltage threshold 1 VADD_1 Set I2C address 61H 0.24 VCC A0 voltage threshold 2 VADD_2 Set I2C address 63H 0.28 0.49 VCC A0 voltage threshold 3 VADD_3 Set I2C address 65H 0.53 0.72 VCC A0 voltage threshold 4 VADD_4 Set I2C address 67H 0.77 VCC A0 to GND pull-down resistor RA0_PD 2 MΩ EN rising threshold VEN_RISING 1.1 1.2 1.3 V EN threshold hysteresis VEN_HYS 110 mV EN to GND pull-down resistor REN 1.5 MΩ VIN under-voltage lockout threshold rising INUVVth_r 2.45 2.65 2.85 V VIN under-voltage lockout threshold falling INUVVth_f 2.5 2.7 V Power good UV threshold rising PGVth-Hi Good 0.86 0.9 0.94 VOUT Power good UV threshold falling PGVth-Lo Fault 0.81 0.85 0.89 VOUT Power good OV threshold rising PGVth-Hi Fault 1.11 1.15 1.19 VOUT Power good OV threshold falling PGVth-Lo Good 1.01 1.05 1.09 VOUT Power good deglitch time PGTd I2C programmable 30 μs Power good sink current capability VPG Sink 4mA 0.4 V |
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