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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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MASTERGAN2TR 数据表(PDF) 8 Page - STMicroelectronics |
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MASTERGAN2TR 数据表(HTML) 8 Page - STMicroelectronics |
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8 / 29 page  4.2 GaN power transistor Table 6. GaN power transistor electrical characteristics VGS = 6 V; TJ = 25°C, unless otherwise specified Symbol Parameter Test condition Min Typ Max Unit GaN on/off states V(BR)DS Drain-source blocking voltage Low side IDSS < 18 µA (1) High side IDSS < 13.3 µA(1) VGS = 0 V 650 V IDSS_LS Zero gate voltage drain current - low side VDS = 600 V VGS = 0 V 0.7 µA IDSS_HS Zero gate voltage drain current - high side VDS = 600 V VGS = 0 V 0.5 µA VGS(th) Gate threshold voltage VDS = VGS Low side, ID = 2.5 mA (1) High side, ID = 1.7 mA (1) 1.7 V IGS_LS Gate to source current - Low side VDS = 0 V (2) 57 µA IGS_HS Gate to source current - High side VDS = 0 V(2) 40 µA RDS(on)_LS Static drain-source on-resistance - Low side ID = 3.2 A TJ = 25°C 150 220 mΩ TJ = 125°C (2) 330 RDS(on)_HS Static drain-source on-resistance - High side ID = 2.2 A TJ = 25°C 225 300 mΩ TJ = 125°C (2) 495 1. Tested at wafer level. 2. Value estimated by characterization, not tested in production. MASTERGAN2 GaN power transistor DS13597 - Rev 2.0 page 8/29 |
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