Features

•

600 V system-in-package integrating half-bridge gate driver and high-voltage

power GaN transistors in asymmetrical configuration:

–

QFN 9 x 9 x 1 mm package

–

RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS)

–

IDS(MAX) = 10 A (LS) + 6.5 A (HS)

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Reverse current capability

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Zero reverse recovery loss

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UVLO protection on low-side and high-side

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Internal bootstrap diode

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Interlocking function

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Dedicated pin for shutdown functionality

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Accurate internal timing match

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3.3 V to 15 V compatible inputs with hysteresis and pull-down

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Overtemperature protection

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Bill of material reduction

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Very compact and simplified layout

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Flexible, easy and fast design.

Application

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Switch-mode power supplies

•

Chargers and adapters

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High-voltage PFC, and DC-DC converters

Description

The MASTERGAN2 is an advanced power system-in-package integrating a gate

driver and two enhancement mode GaN transistors in asymmetrical half

‑bridge

configuration.

The integrated power GaNs have 650 V drain

‑source blocking voltage and RDS(ON)

of 150 mΩ and 225 mΩ for Low side and High side respectively, while the high

side of the embedded gate driver can be easily supplied by the integrated bootstrap

diode.

The MASTERGAN2 features UVLO protection on both the lower and upper

driving sections, preventing the power switches from operating in low efficiency

or dangerous conditions, and the interlocking function avoids cross-conduction

conditions.

The input pins extended range allows easy interfacing with microcontrollers, DSP

units or Hall effect sensors.

The MASTERGAN2 operates in the industrial temperature range, -40°C to 125°C.

The device is available in a compact 9x9 mm QFN package.

Product status link

MASTERGAN2

Product label

High power density 600V Half bridge driver with two enhancement mode GaN

HEMT

MASTERGAN2

Datasheet

DS13597 - Rev 2.0 - June 2021

For further information contact your local STMicroelectronics sales office.

www.st.com