5

Device characterization values

The information in Table 7 and Table 8 represents typical values based on characterization and simulation results

and are not subject to the production test.

Table 7. GaN power transistor characterization values

Symbol

Parameter

Test condition

Min Typ Max Unit

QG

Total gate charge

VGS = 6 V, TJ = 25°C

VDS = 0 to 400 V - Low side

2

nC

VGS = 6 V, TJ = 25°C

VDS = 0 to 400 V - High side

1.5

nC

QOSS

Output charge - Low side

VGS = 0 V,

VDS = 400 V

20

nC

Output charge - High side

14

nC

EOSS

Output capacitance stored energy - Low side

2.7

µJ

Output capacitance stored energy - High side

1.7

µJ

COSS

Output capacitance - Low side

20

pF

Output capacitance - High side

14.2

pF

CO(ER)

Effective output capacitance energy related - Low side (1)

VGS = 0 V,

VDS = 0 to 400 V

31

pF

Effective output capacitance energy related - High side(1)

21

pF

CO(TR)

Effective output capacitance time related - Low side (2)

50

pF

Effective output capacitance time related - High side(2)

34

pF

QRR

Reverse recovery charge

0

nC

IRRM

Reverse recovery current

0

A

1. CO(ER) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0 V to the stated

VDS

2. CO(TR) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0 V to the stated

VDS

Table 8. Inductive load switching characteristics

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

t(on) (1)

Turn-on time - Low side

VS = 400 V,

VGS = 6 V,

ID_LS = 3.2 A,

ID_HS= 2.2 A

See Figure 3

70

ns

Turn-on time - High side

70

ns

tC(on) (2)

Crossover time (on) - Low side

15

ns

Crossover time (on) - High side

25

ns

t(off)(1)

Turn-off time - Low side

70

ns

Turn-off time - High side

70

ns

tC(off) (2)

Crossover time (off) - Low side

15

ns

Crossover time (off) - High side

10

ns

tSD

Shutdown to high/low-side propagation delay

70

ns

Eon

Turn-on switching losses - Low side

12.5

µJ

Turn-on switching losses - High side

10

µJ

MASTERGAN2

Device characterization values

DS13597 - Rev 2.0

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