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RT6310C/CH 数据表(PDF) 41 Page - Richtek Technology Corporation

部件名 RT6310C/CH
功能描述  10A, 23V Synchronous Step-Down Converter with 3.3V/5V LDO
PDF  54 Pages
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制造商  RICHTEK [Richtek Technology Corporation]
网页  http://www.richtek.com
标志 RICHTEK - Richtek Technology Corporation

RT6310C/CH 数据表(HTML) 41 Page - Richtek Technology Corporation

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RT6310
Copyright © 2023 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
DS6310-04
August 2023
www.richtek.com
41
OUT
ON
IN
SW
V
t
=
Vf
ON
MAX
ON
OFF_MIN
t
D
=
t
+ t
The worst-case output sag voltage is determined by :
(
)
2
L_PEAK
OUT_SAG
OUT
IN
MAX
OUT
LI
V
=
2 C
V
D
V
When the load is removed, the amount of overshoot due
to stored inductor energy is calculated as :
2
L_PEAK
OUT_SOAR
OUT
OUT
LI
V
=
2 C
V

Ceramic capacitors have very low equivalent series
resistance
(ESR)
and
provide
the
best
ripple
performance. Be careful to consider the voltage
coefficient of ceramic capacitors when choosing the
value and case size. Most ceramic capacitors lose 50%
or more of their rated value when used near their rated
voltage.
Internal VCC Regulator (VCC)
Good bypassing at VCC pin is necessary to supply the
high transient currents required by the MOSFET gate
drivers. Place a low ESR MLCC capacitor (C =
1
F/0603) as close as possible to VCC pin and AGND
pin. Applications with high input voltage and high
switching frequency will increase die temperature
because of the higher power dissipation across the LDO.
Do not connect VCC pin to provide power to other
devices or loads.
External Bootstrap Capacitor and Resistor (CBOOT
and RBOOT)
Connect a 0.1
F/0603 low ESR ceramic capacitor and
 10 resistor between BOOT pin and LX pin. This
bootstrap capacitor provides the gate driver supply
voltage for the high-side MOSFET. The internal gate
driver is optimized to turn the high-side MOSFET on fast
enough for low power loss and good efficiency, but also
slow enough to reduce EMI. The most of EMI occurs
since VLX rises rapidly when the high-side MOSFET is
turned on fast. In some cases, slightly increasing the
RBOOT reduces EMI and LX pin spike directly, but the
switching loss of high-side MOSFET and die/case
temperature are also increased.
Output Voltage Programming
For the RT6310A/AH/D/DH, an external resistive divider
sets the output voltage according to the following
equation :
OUT
REF
R1
V
= 1 +
V
R2



FB
VOUT
RT6310A/AH
RT6310D/DH
R1
R2
AGND
Figure 15. Output Voltage Setting
The recommended R2 is set to around 40k
. For a
given R2, the resistance of R1 is calculated as below :
(
)
OUT
REF
REF
R2
V
V
R1 =
V
−
1% resistors are recommended to maintain output
voltage
accuracy.
Besides,
the
resistor
divider
generates a small load on the output, which influences
the light-load efficiency. The total resistance of the FB
resistor divider should be as large as possible when
good light-load efficiency is desired.
Place resistors R1 and R2 very close to the FB pin to
minimize PCB trace length and noise. Great care should
be taken to route the FB trace away from noise sources,
such as the inductor or the LX trace. For better transient
and stability performance, it is recommended to add
CFF.
Feedforward Capacitor CFF Design
To save time for compensator design and to reduce the
layout
area
through
external
components,
the
components of compensator are integrated in the IC.
However, this integrated compensator might not be
suitable for every load transient specification. Hence, to
make
RT6310
more
adaptable,
the
feedforward



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