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RT6310C/CH 数据表(PDF) 46 Page - Richtek Technology Corporation |
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RT6310C/CH 数据表(HTML) 46 Page - Richtek Technology Corporation |
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46 / 54 page ![]() RT6310 Copyright © 2023 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. www.richtek.com DS6310-04 August 2023 46 RT6310C/CH L CIN CIN COUT CBO OT RBO OT COUT COUT COUT CLDO GND VOUT GND CIN GND VEN/MODE LX pin: LX should be connected to inductor by wide and short trace, and Do NOT use any via for LX. Keep sensitive components away from this area. PGND pin: For thermal performance, the vias under the IC must be placed through at least two layers of PGND trace. The recommended via size is 8 mil drill/16 mil copper width. GND CIN: The input capacitor must be placed as close to the IC as possible for noise immunity and phase ring. VIN pin: The VIN trace should be wide enough for high current density application (at least two VIN layers). The number of vias is based on input maximum current to design. VIN AGND pin: The AGND and PGND should be connected by single point grounding to avoid ground level shift. CFF: The optional compensation components (CFF) must be connected as close to the IC as possible. CFF GND 10 11 12 13 14 15 16 17 18 19 20 21 22 23 1 2 3 4 5 6 7 8 9 LX LX BOOT PGND VIN VIN EN/MODE Figure 23. RT6310C/CH Layout Guide |
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