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CAT25C01LITE13 数据表(PDF) 2 Page - Catalyst Semiconductor

部件名 CAT25C01LITE13
功能描述  1K/2K/4K SPI Serial CMOS EEPROM
PDF  15 Pages
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制造商  CATALYST [Catalyst Semiconductor]
网页  http://www.catalyst-semiconductor.com
标志 CATALYST - Catalyst Semiconductor

CAT25C01LITE13 数据表(HTML) 2 Page - Catalyst Semiconductor

  CAT25C01LITE13 Datasheet HTML 1Page - Catalyst Semiconductor CAT25C01LITE13 Datasheet HTML 2Page - Catalyst Semiconductor CAT25C01LITE13 Datasheet HTML 3Page - Catalyst Semiconductor CAT25C01LITE13 Datasheet HTML 4Page - Catalyst Semiconductor CAT25C01LITE13 Datasheet HTML 5Page - Catalyst Semiconductor CAT25C01LITE13 Datasheet HTML 6Page - Catalyst Semiconductor CAT25C01LITE13 Datasheet HTML 7Page - Catalyst Semiconductor CAT25C01LITE13 Datasheet HTML 8Page - Catalyst Semiconductor CAT25C01LITE13 Datasheet HTML 9Page - Catalyst Semiconductor Next Button
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Discontinued
Parts
2
CAT25C01, CAT25C02, CAT25C04
Doc. No. 1105, Rev. B
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature
-65
°C to +150°C
Voltage on Any Pin with Respect to Ground(1)
-0.5 V to +6.5 V
* Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification
is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
RELIABILITY CHARACTERISTICS(2)
Symbol
Parameter
Min
Units
NEND(*)
Endurance
1,000,000
Program/ Erase Cycles
TDR
Data Retention
100
Years
(*) Page Mode, VCC = 5 V, 25
°C
D.C. OPERATING CHARACTERISTICS
VCC = 1.8 V to 5.5 V, TA = -40
°C to 85°C, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Max
Units
ICC
Supply Current
Read or Write at 5 MHz
1
mA
ISB
Standby Current
All I/O Pins at GND or VCC,2
µA
CS = VCC
IL
I/O Pin Leakage
Pin at GND or VCC
2
µA
VIL
Input Low Voltage
-0.5
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7 VCC + 0.5
V
VOL1
Output Low Voltage
VCC > 2.5 V, IOL = 3.0 mA
0.4
V
VOL2
Output Low Voltage
VCC > 1.8 V, IOL = 1.0 mA
0.2
V
PIN IMPEDANCE CHARACTERISTICS
TA = 25
°C, f = 1 MHz, VCC = 5 V
Symbol
Parameter
Conditions
Min
Max
Units
CIN(2)
SDA I/O Pin Capacitance
VIN = 0 V
8
pF
CIN(2)
Input Capacitance (other pins)
VIN = 0 V
6
pF
ZWPL
WP Input Low Impedance
VIN < 0.5 V
5
70
k
ILWPH
WP Input High Leakage
VIN > VCC x 0.7
2
µA
Note:
(1) The DC input voltage on any pin should not be lower than -0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin
may undershoot to no less than -1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
(2) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.



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