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AT45DB321C-RU 数据表(PDF) 21 Page - ATMEL Corporation

部件名 AT45DB321C-RU
功能描述  32-megabit 2.7 volt DataFlash
PDF  40 Pages
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制造商  ATMEL [ATMEL Corporation]
网页  http://www.atmel.com
标志 ATMEL - ATMEL Corporation

AT45DB321C-RU 数据表(HTML) 21 Page - ATMEL Corporation

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3387L–DFLASH–6/06
AT45DB321C
10. Electrical Specifications
Note:
1. After power is applied and VCC is at the minimum specified datasheet value, the system should wait 20 ms before an opera-
tional mode is started.
Notes:
1. I
SB maximum specification limit is tested at 3.3V and 70°C.
2. ICC1 during a buffer read is 30 mA maximum.
3. ICC1 changes typically by 300 µA per 1 MHz change in clock frequency.
4. All inputs are 5 volts tolerant.
Table 10-1.
Absolute Maximum Ratings*
Temperature under Bias ................................ -55
°C to +125°C
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Storage Temperature ..................................... -65
°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Table 10-2.
DC and AC Operating Range
AT45DB321C
Operating Temperature (Case)
Com.
0
°C to 70°C
Ind.
-40
°C to 85°C
VCC Power Supply
(1)
2.7V to 3.6V
Table 10-3.
DC Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Units
I
SB
(1)
Standby Current
CS, RESET, WP = VIH, all
inputs at CMOS levels
615
µA
I
CC1
(2)(3)
Active Current, Read
Operation, Serial Interface
f = 20 MHz; I
OUT = 0 mA;
VCC = 3.6V
10
15
mA
ICC2
Active Current, Program
Operation, Page Program
VCC = 3.6V
35
50
mA
I
CC3
Active Current, Page Erase
Operation
V
CC = 3.6V
30
40
mA
I
CC4
Active Current, Block Erase
Operation
V
CC = 3.6V
30
40
mA
I
LI
Input Load Current
V
IN = CMOS levels
1
µA
I
LO
Output Leakage Current
V
I/O = CMOS levels
1
µA
VIL
Input Low Voltage
VCC x 0.3
V
V
IH
Input High Voltage
V
CC x 0.7
V
V
OL
Output Low Voltage
I
OL = 1.6 mA; VCC = 2.7V
0.4
V
VOH
Output High Voltage
IOH = -100 µA
VCC - 0.2V
V



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