6

3387L–DFLASH–6/06

AT45DB321C

5.2.2

Buffer to Main Memory Page Program with Built-in Erase:

Data written into either buffer 1 or buffer 2 can be programmed into the main memory. To start

the operation, an 8-bit opcode, 83H for buffer 1 or 86H for buffer 2, must be clocked into the

device followed by three address bytes consisting of one reserved bit, 13 page address bits

(PA12-PA0) that specify the page in the main memory to be written and 10 don’t care bits. When

a low-to-high transition occurs on the CS pin, the part will first erase the selected page in main

memory (the erased state is a logic 1) and then program the data stored in the buffer into the

specified page in main memory. Both the erase and the programming of the page are internally

self-timed and should take place in a maximum time of t

and the RDY/BUSY pin will indicate that the part is busy.

5.2.3

Buffer to Main Memory Page Program without Built-in Erase

A previously-erased page within main memory can be programmed with the contents of either

buffer 1 or buffer 2. To start the operation, an 8-bit opcode, 88H for buffer 1 or 89H for buffer 2,

must be clocked into the device followed by three address bytes consisting of one reserved bit,

13 page address bits (PA12-PA0) that specify the page in the main memory to be written and 10

don’t care bits. When a low-to-high transition occurs on the CS pin, the part will program the

data stored in the buffer into the specified page in the main memory. It is necessary that the

page in main memory that is being programmed has been previously erased using one of the

erase commands (Page Erase or Block Erase). The programming of the page is internally self-

timed and should take place in a maximum time of t

the RDY/BUSY pin will indicate that the part is busy.

5.2.4

Page Erase

The Page Erase command can be used to individually erase any page in the main memory array

allowing the Buffer to Main Memory Page Program without Built-in Erase command to be utilized

at a later time. To perform a page erase, an opcode of 81H must be loaded into the device, fol-

lowed by three address bytes comprised of one reserved bit, 13 page address bits (PA12-PA0)

that specify the page in the main memory to be erased and 10 don’t care bits. When a low-to-

high transition occurs on the CS pin, the part will erase the selected page (the erased state is a

logic 1). The erase operation is internally self-timed and should take place in a maximum time of

t

5.2.5

Block Erase

A block of eight pages can be erased at one time. This command is useful when large amounts

of data has to be written into the device. This will avoid using multiple Page Erase Commands.

To perform a block erase, an opcode of 50H must be loaded into the device, followed by three

address bytes comprised of one reserved bit, 10 page address bits (PA12-PA3) and 13 don’t

care bits. The 10 page address bits are used to specify which block of eight pages is to be

erased. When a low-to-high transition occurs on the CS pin, the part will erase the selected

block of eight pages. The erase operation is internally self-timed and should take place in a max-

imum time of t

the part is busy.