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AM29PL160CB-65REF 数据表(PDF) 40 Page - Advanced Micro Devices

部件名 AM29PL160CB-65REF
功能描述  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
PDF  44 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29PL160CB-65REF 数据表(HTML) 40 Page - Advanced Micro Devices

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38
Am29PL160C
22143C7 May 9, 2006
D A TA
SH EE T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 10 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
* For reference only. BSC is an ANSI standard for Basic Space Centering.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
5
60
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
40
s
Byte Programming Time
7
300
µs
Excludes system level
overhead (Note 5)
Word Programming Time
9
360
µs
Chip Programming Time
(Note 3)
Byte Mode
14
42
s
Word Mode
9
27
s
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9 and OE#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
TSOP
7.5
9
pF
SO
8
10
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C10
Years
125
°C20
Years



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